Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Temperature dependence of the band gap of semiconducting carbon nanotubes.

The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a "frozen-phonon" scheme. An interesting diameter and chirality dependence of E(g)(T) is obtained, including nonmonotonic behavior for certain tubes and distinct "family" behavior. These results are traced to a strong and comple...

متن کامل

Direct Band Gap Gallium Antimony Phosphide (GaSbxP(1-x)) Alloys.

Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP(1-x) alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher S...

متن کامل

Electromagnetically induced exciton mobility in a photonic band gap.

It is suggested that an exciton in the engineered vacuum of a photonic-band-gap-quantum-well heterostructure exhibits electromagnetically induced anomalous quantum dynamics. The exciton is dressed by coherent emission and reabsorption of virtual photons near the photonic band edge and captured in momentum space, lowering its energy by 1-10 meV and lowering its effective mass by 4-5 orders of ma...

متن کامل

Carrier recombination in InGaAs(P) Quantum Well Laser Structures: Band gap and Temperature Dependence

Using a combination of temperature and pressure dependence measurements, we investigate the relative importance of recombination processes in InGaAs-based QW lasers. We find that radiative and Auger recombination are important in high quality InGaAs material. At 1.5μm, Auger recombination accounts for 80% Ith at room temperature reducing to ~50% at 1.3μm and ~15% at 980nm. We also find that Aug...

متن کامل

Plasmonic band gap engineering of plasmon-exciton coupling.

Controlling plasmon-exciton coupling through band gap engineering of plasmonic crystals is demonstrated in the Kretschmann configuration. When the flat metal surface is textured with a sinusoidal grating only in one direction, using laser interference lithography, it exhibits a plasmonic band gap because of the Bragg scattering of surface plasmon polaritons on the plasmonic crystals. The contra...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: APL Materials

سال: 2018

ISSN: 2166-532X

DOI: 10.1063/1.5030207